SAMSUNG M2676 OPC DRUM

3.3 µH Shielded Drum Core, Wirewound Inductor 3.1 A 101mOhm Max 1210 (3225 Metric)

20,70 TRY

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4.7 mH Shielded Drum Core, Wirewound Inductor 280 mA 9.6Ohm Max Nonstandard

64,85 TRY

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10 µH Shielded Drum Core, Wirewound Inductor 28 A 2.5mOhm Max Nonstandard

286,29 TRY

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68 µH Shielded Drum Core, Wirewound Inductor 2.85 A 95.6mOhm Max 2-SMD Drum Core, High Current, Low DCR

93,13 TRY

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39 µH Shielded Drum Core, Wirewound Inductor 3.5 A 75.2mOhm Max 2-SMD Drum Core, High Current, Low DCR

74,51 TRY

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33 µH Shielded Drum Core, Wirewound Inductor 2.2 A 93mOhm Max Nonstandard

70,37 TRY

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47 µH Shielded Drum Core, Wirewound Inductor 2.85 A 92mOhm Max 2-SMD Drum Core, Power Inductor

68,99 TRY

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4.7 µH Semi-Shielded Drum Core, Wirewound Inductor 1.04 A 144mOhm Max Nonstandard

17,94 TRY

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10 µH Shielded Drum Core, Wirewound Inductor 2.5 A 61.1mOhm Max Nonstandard

20,70 TRY

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470 nH Shielded Drum Core, Wirewound Inductor 38 A 0.32mOhm Nonstandard

131,07 TRY

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